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Amplitude of photostructural changes in chalcogenide vitreous semiconductors

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
51
Issue
8
Identifiers
DOI: 10.1016/0038-1098(84)91080-9

Abstract

Abstract It is shown that a position of an optical absorption edge (OAE) of amorphous AsSe and As 2S 3 films irradiated by light up to saturation is independent on T exp the temperature at which the sample is exposed, and the amplitude of a reversible photoinduced shift of OAE ΔE is determined by its thermal shift ΔE as it is heated from T exp up to the glass-transition temperature T g . So, in order to obtain maximum photoinduced changes we need to use materials with maximum thermal variations of the forbidden zone width, and to tend to a greater difference between T g and T exp . The obtained results are well explained within the scope of the local heating model.

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