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Three-dimensional modelling of galvanomagnetic effects in lateral magnetotransistor structure

Authors
Journal
Sensors and Actuators A Physical
0924-4247
Publisher
Elsevier
Publication Date
Volume
30
Identifiers
DOI: 10.1016/0924-4247(92)80203-f

Abstract

Abstract To optimize a lateral magnetotransistor (LMT) it is essential to know the initial potential distribution in the device, created by the majority carrier current. The potential distribution in an LMT structure is calculated by solving the Laplace equation in three dimensions (3-D). The obtained results are compared with those for 2-D modelling. It is shown that for a device whose length is greater than its width the 2-D model gives only a qualitative description.

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