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Electron states in GaAs/Ga1−xAlxAs heterostructures: Nonparabolicity and spin-splitting

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
2
Issue
3
Identifiers
DOI: 10.1016/0749-6036(86)90030-3

Abstract

Abstract We investigate the influence of the nonparabolicity of bulk bandstructure on the electron subbands in GaAs/Ga 1−xAl xAs heterojunctions. Our calculation is based on a self-consistent solution of the subband problem in the parabolic approximation and takes into account the nonparabolic contributions (of order k 3 and k 4) and the spin-orbit term ∼( k × E )· σ by perturbation theory. The calculated electron subbands exhibit a nonparabolic dispersion and spin-splitting, whose variation with Al-concentration x and free carrier density N s is investigated.

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