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The influence of surface oxide films on the stabilization of n-Si photoelectrode

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
109
Issue
1
Identifiers
DOI: 10.1016/0039-6028(81)90512-4

Abstract

Abstract We have provided direct evidence of the enhanced effectiveness of stabilizing agents due to thin surface oxide films, ca. 15–25 Å, on n-Si photoelectrode. Rotating ring disc electrode and ellipsometric experiments are combined to show the stabilization efficiency of potassium ferrocyanide improves with oxide thickness. A band model describing the observed effect is given.

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