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The critical charge density in high voltage 4H-SiC thyristors

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
47
Issue
4
Identifiers
DOI: 10.1016/s0038-1101(02)00325-8
Keywords
  • Silicon Carbide
  • Thyristor
  • Switch-On
  • Critical Charge

Abstract

Abstract The critical charge density in 2.6 kV 4H-SiC thyristors, n cr, has been investigated in the temperature range from 300 to 500 K using gate-controlled switching and pulsed optical triggering. The n cr values furnished by these different techniques are in reasonable agreement. The n cr decreases monotonically from n cr∼10 16 cm −3 at T=300 K to n cr∼10 14 cm −3 at T=500 K. At room temperature, the n cr value found in this study for high-voltage SiC thyristors is an order of magnitude larger than that in low-voltage SiC thyristors with breakover voltage of 400 V, and is of the same order as that in the high-voltage power Si thyristors.

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