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Noise measurement analysis of NPN transistors after gamma irradiation—An investigation for reliability

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
21
Issue
2
Identifiers
DOI: 10.1016/0026-2714(81)90392-9

Abstract

Abstract Electrical noise characteristic of semiconductor devices like transistors, zener diodes and linear integrated circuits was presented in my earlier paper[3]. The present paper deals with the behaviour of noise levels after gamma radiation in the case of NPN silicon planar transistors. Noise level of these transistors increases significantly after the dose level of 10 5 R.

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