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Determination of the surface barrier height by combined measurements of surface photovoltage and field effect

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
26
Issue
2
Identifiers
DOI: 10.1016/0039-6028(71)90014-8

Abstract

Abstract A new technique is described for determining the surface barrier height in large-gap semi-conductors. Field effect induced variations of the surface barrier height are picked up by superimposed surface photovoltage measurements. The magnitude of the electric field which causes the flattening of the energy bands is determined and used to calculate the surface barrier height in equilibrium.

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