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In situspectromicroscopic study of nickel induced lateral crystallization of amorphous silicon thin film using SPESM

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
601
Issue
2
Identifiers
DOI: 10.1016/j.susc.2006.09.038
Keywords
  • Scanning Photoelectron Spectromicroscopy
  • Metal Induced Lateral Crystallization
  • Polycrystalline Silicon
  • Si 2P Core Level
Disciplines
  • Chemistry

Abstract

Abstract Scanning photoelectron spectromicroscopy (SPESM) has been used to study nickel metal induced lateral crystallization (Ni-MILC) of amorphous silicon (a-Si) thin films, produced by in situ annealing of vacuum deposited Ni patterned films on a-Si. The spatial variations in the chemical composition of the Ni-MILC of a-Si were directly imaged. High-resolution photoemission spectra of both Si 2p and Ni 3p core levels and valence band were used to evaluate morphological changes and chemical interactions. Our direct spectromicroscopic characterization clearly shows that the Ni-MILC process in UHV leads to the lower crystallization temperature and a faster crystallization speed of a-Si, and a poly-Si film with high-crystallinity can be obtained. A unified mechanism for the enhanced growth rate of the high-crystallinity poly-Si film produced by Ni-MILC in UHV is proposed.

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