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Hall coefficients for A15 compounds: Nb-Sn and V-Si

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
28
Issue
9
Identifiers
DOI: 10.1016/0038-1098(78)91347-9
Disciplines
  • Physics

Abstract

Abstract The Hall coefficients, R H , for A15 structure single crystal V 3Si and polycrystal V25.25 at.% Si and Nb 26 at.% Sn have been measured as functions of temperature. The data between the superconducting transition temperature, T c , and 80 K for the Nb-Sn show a small dip centred arounf 30 K which accompanies a cubic-to-tetragonal lattice distortion commencing at about 45 K. R H for the VSi samples, which are believed to be non-transforming, is temperature independent in the range 17–40 K and equal to 2.0 ± 0.2×10 −10m 3C −1. These result are discussed in relation to the effect of the tetragonal distortion on the band structures of these compounds.

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