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Spin-dependent transport and recombination in a-Si:H

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-3093(05)80104-8
Keywords
  • Part I
  • Section 6. Metastable Defects

Abstract

We report on a study of spin-dependent photoconductivity in undoped a-Si:H. Applying the microwave modulation technique we observe in addition to the two already known e-db and h resonances an unusually broad quenching signal (g2.008, ΔH fwhm = 210 G). We varied the defect density N d systematically by electron bombardment and light soaking and found a pronounced dependence of the signal intensity of this line on N d. This behavior is consistent with an assignment to the recombination of exchange coupled e-h pairs which are localized in the band tails. We present first results obtained on pin structures which confirm the current ideas about carrier collection in these devices.

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