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Recrystallization of silicon-on-insulator layers in pulsed nanosecond heating (model calculations)

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
171
Issue
1
Identifiers
DOI: 10.1016/0040-6090(89)90046-1

Abstract

Abstract Using a model of pulsed thermal annealing, the processes of temperature variation and phase transformations in silicon-on-insulator structures with a crystal seed have been studied. For a ruby laser ( λ = 693 nm) and a pulse duration of 30 ns the effect of changes in the initial thicknesses of poly Si and SiO 2 layers on the duration of the melt on the SiO 2 surface, which determines the crystal growth, was analysed. It was found that, with a rise in the substrate temperature from 300 to 1500 K, the length of growing crystallites increases, reaching 20 μm. The threshold densities of the pulse energy that lead to complete melting of the poly-Si layer with no change in the structure of the monocrystalline substrate were calculated for various thicknesses of the poly-Si layer and the insulator.

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