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Photoconductivity and optical stability of intrinsic μc-Si films formed by remote plasma-enhanced chemical-vapor deposition, remote pecvd

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-3093(05)80226-1
Keywords
  • Part Ii
  • Section 12. Deposition And Growth

Abstract

μc-Si deposited by RPECVD is n-type with a room temperature dark conductivity of ∼6×10 −4 S/cm and an activation energy of ∼0.3 eV, due to native donor-like defects. We report conductivity and photoconductivity in B-doped μc-Si, emphasizing doping levels that are used to exactly compensate the native defects, and produce a high resistivity, highly photoconductive form of μc-Si.

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