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Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistors

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
29
Issue
9
Identifiers
DOI: 10.1016/0038-1101(86)90014-6

Abstract

Abstract In this paper the charge-control model for GaAlAs/GaAs heterojunction bipolar transistors is checked via a new experimental method. The latter is assessed by comparing the forward and reverse transfer characteristics of single or double heterojunction bipolar transistors. The satisfactory result obtained emphasizes the attractiveness of such a model for predicting the performances of microwave transistors or integrated high-speed logic circuits.

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