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Preparation of oxide thin films by controlled diffusion of oxygen atoms

Authors
Journal
Solid State Ionics
0167-2738
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0167-2738(00)00570-1
Keywords
  • Oxide Thin Films
  • Controlled Diffusion
  • Oxygen Permeability
  • Cu2O

Abstract

Abstract A new method for preparing thin oxide films is described. It makes use of slow diffusion of oxygen through a permeable layer, towards the metal to be oxidized. We have used this method to oxidize copper. The permeable layer is a dense silver film. The formation of the oxide was followed in situ in an attempt to measure the resistance of the cell.

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