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Electron trapping by excited microvoids does not give rise to a Staebler–Wronski effect

Authors
Journal
Physica B Condensed Matter
0921-4526
Publisher
Elsevier
Publication Date
Volume
358
Identifiers
DOI: 10.1016/j.physb.2005.01.142
Keywords
  • Staebler–Wronski Effect
  • Amorphous Silicon

Abstract

Abstract It is shown that the model of electron trapping by excited microvoids recently proposed by Krüger and Sax (Physica B 353 (2004) 263) does not lead to the phototransport features that are characteristic for the Staebler–Wronski effect. According to that model, a photoinduced degradation, if present at all, would show a characteristic time constant of the order of a few milliseconds rather than the experimentally observed 1000 h.

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