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Boosting the Performance of Self-Powered CsPbCl3-Based UV Photodetectors by a Sequential Vapor-Deposition Strategy and Heterojunction Engineering.

Authors
  • Zhan, Xiaobin1
  • Zhang, Xuning1
  • Liu, Zhiyong1
  • Chen, Chen1
  • Kong, Lingxian1
  • Jiang, Shulan2
  • Xi, Shuang3
  • Liao, Guanglan1
  • Liu, Xingyue1, 2
  • 1 State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China. , (China)
  • 2 School of Mechanical Engineering and Electronic Information, China University of Geosciences (Wuhan), Wuhan 430074, China. , (China)
  • 3 School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China. , (China)
Type
Published Article
Journal
ACS Applied Materials & Interfaces
Publisher
American Chemical Society
Publication Date
Sep 29, 2021
Volume
13
Issue
38
Pages
45744–45757
Identifiers
DOI: 10.1021/acsami.1c15013
PMID: 34545739
Source
Medline
Keywords
Language
English
License
Unknown

Abstract

All-inorganic CsPbCl3 perovskite in ultraviolet (UV) detection is drawing increasing interest owing to its UV-matchable optical band gap, ultrahigh UV stability, and superior inherent optoelectronic properties. Almost all of the reported CsPbCl3 photodetectors employ CsPbCl3 nano- or microstructures as sensitive components, while CsPbCl3 polycrystalline film-based self-powered photodetectors are rarely studied on account of the terrible precursor solubility. Herein, a novel sequential vapor-deposition technique is demonstrated to fabricate CsPbCl3 polycrystalline film for the first time. High-quality CsPbCl3 films with excellent optical, electronic, and morphological features are obtained. A self-powered photodetector based on the CsPbCl3 film is constructed without any charge transport layer, showing a high UV detection performance. A thin p-type PbS buffer layer is further introduced to passivate the surface defects of the CsPbCl3 layer and decrease the interfacial energy barrier by forming a type-II heterojunction, contributing to a faster hole extraction rate and a suppressed dark current level. The best-performing device achieves an ultrafast response time of 1.92 μs, an ultrahigh on/off ratio of 2.22 × 105, and a responsivity of 0.22 A/W upon 375 nm UV illumination at 0 V bias. This comprehensive performance is the best among all of the CsPbCl3 photodetectors reported to date. The as-prepared photodetectors also present an eminent UV irradiation and long-term durability in ambient air. Furthermore, a large-area and uniform 625-pixel UV image sensor is fabricated and attains a prominent imaging capability. Our work opens a new avenue for the scalable production of CsPbCl3-based optoelectronics.

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