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Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si.

Authors
  • Liu, Shuai
  • Cheng, Ping
  • Wang, Hui
Type
Published Article
Journal
Optics Letters
Publisher
The Optical Society
Publication Date
Jun 01, 2012
Volume
37
Issue
11
Pages
1814–1816
Identifiers
DOI: 10.1364/OL.37.001814
PMID: 22660038
Source
Medline
License
Unknown

Abstract

In this study, we report our new finding of bipolar resistance effect (BRE) in quantum dots (QDs)-embedded structure of Zn/CdSe/Si. This effect features a remarkable linear resistance change and an enhanced BRE when a laser moves along the surface of the structure. The results show that the combination of BRE with QDs is useful for applications and may add a new functionality to QDs-based optoelectronic devices.

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