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(Bi2Te3)0:25(Sb2Te3)0:75 crystal structure improvements with excess Te as studied by AFM, SEM, EBSD and XRD

Authors
  • Kavei, G.
  • Ahmadi, K.
  • Shadmehr, A.
  • Kavei, A.
Type
Published Article
Journal
Materials Science-Poland
Publisher
Versita
Publication Date
Jun 01, 2011
Volume
29
Issue
2
Pages
143–151
Identifiers
DOI: 10.2478/s13536-011-0021-9
Source
De Gruyter
Keywords
License
Green

Abstract

(Bi2Te3)x(Sb2Te3)1−x solid solutions with x = 0:2, 0.25 and 0.3 − p type thermoelectric compounds with an excess of Tellurium dopant up to 4 wt% were crystallized. By increasing the Bi2Te3 content in the Bi-Sb-Te system, the hole concentration decreased and in consequence caused an optimum Seebeck coefficient and a decrease in electrical conductivity and thermal conductivity, thus resulting in an increase in the figure of merit at x = 0:25. The results showed that optimum thermoelectric properties can be achieved for a mixture of x = 0:25 with 3 wt% Te added. Structural characterizations of this compound in the absence and presence of the dopant were carried out by means of X-Ray diffraction measurement, scanning electron microscopy, electron backscattering diffraction and atomic force microscopy. Detailed analyses confirm that the improvements in thermoelectric parameters due to the intrinsic structure and minimum defects during crystallization of the compounds result from the excess of Te.

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