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Temperature-dependent photoluminescence in porous amorphous silicon

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DOI: 10.1016/b978-0-444-82414-1.50038-0

Abstract

ABSTRACT Having shown by transmission electron microscopy that a suitable electrolytic processing of boron-doped amorphous hydrogenated silicon (a-Si:H) yields porous amorphous films with a nanometre-scale microstructure similar to that of highly porous p-type crystalline silicon layers (PcSL), we report and discuss the qualitative similarities and quantitative differences between the temperature dependence of the time-resolved and steady-state photoluminescence (PL) in both materials. Keywords: Luminescence; Amorphous materials; Silicon; Transmission electron microscopy

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