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Effect of a surfactant on the growth of Si/Ge heterostructures

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
222
Identifiers
DOI: 10.1016/0040-6090(92)90049-h

Abstract

Abstract The effect of a surfactant on the growth of Si/Ge/Si heterostructures has been investigated by means of extended X-ray absorption fine structure and reflection high energy electron diffraction. Antimony as a surfactant partially prevents the mixing of silicon and germanium within 3.8 ML. It has been demonstrated that a major effect of a surfactant is to reduce the surface mobility of growing species which consequently restricts both islanding and segregation with the sacrifice of surface morphology.

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