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Behavior of triple-gate Bulk FinFETs with and without DTMOS operation

  • Caño de Andrade, Maria Gloria
  • Martino, Joao Antonio
  • Aoulaiche, Marc
  • Collaert, Nadine
  • Simoen, Eddy
  • Claeys, Cor
Publication Date
Jan 01, 2012
Biblioteca Digital da Produção Intelectual da Universidade de São Paulo (BDPI/USP)
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In this paper, the combination of the Dynamic Threshold (DT) voltage technique with a non-planar structure is experimentally studied in triple-gate FinFETs. The drain current, transconductance, resistance, threshold voltage, subthreshold swing and Drain Induced Barrier Lowering (DIBL) will be analyzed in the DT mode and the standard biasing configuration. Moreover, for the first time, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance. Early voltage and intrinsic voltage gain will be studied experimentally and through three-dimensional (3-D) numerical simulations for different channel doping concentrations in triple-gate DTMOS FinFETs. The results indicate that the DTMOS FinFETs always yield superior characteristic; and larger transistor efficiency. In addition, DTMOS devices with a high channel doping concentration exhibit much better analog performance compared to the normal operation mode, which is desirable for high performance low-power/low-voltage applications. (C) 2011 Elsevier Ltd. All rights reserved.

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