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Photoelectrical memory effect in ZnIn2Se4

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
38
Issue
7
Identifiers
DOI: 10.1016/0038-1098(81)90953-4

Abstract

Abstract The compound ZnIn 2Se 4 with n-type conductivity is shown to exhibit electro-optical memory effect and negative resistance effect similar to those previously reported for ZnIn 2S 4. At low temperature ZnIn 2Se 4 material will present a high conductivity during and after illumination by light of energy greater than the band gap. This high conductivity state can be quenched in three different ways (i) by heating the sample until it reaches room temperature, (ii) by illumination with monochromatic light of appropriate energy, (iii) by an electric field. In the latter case the material exhibits a negative resistance effect in the transition between the low and high conductivity conditions. These charge storage phenomena have been explained by assuming the presence of a level, localized in the forbidden gap, which is twofold negative charged and presents a repulsive barrier to the recombination of electrons.

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