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Fermi energy pinning at the surface of high mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub> AI<sub>0.48</sub>As modulation doped field effect transistor structures

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  • Qc Physics

Abstract

Fermi level pinning at the surface of the undoped In0.52Al0.48As Schottky layer in high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures has been studied. The electron subband densities for samples prepared with different Schottky layer thicknesses have been deduced from fast Fourier transform analyses of 1.5 K Shubnikov-de Haas data. These results have been compared with densities calculated self-consistently using the free surface potential ΦS as the only fitting parameter. Good agreement between theory and experiment is achieved for a surface Fermi energy pinned 0.65±0.05eV below the In0.52Al0.48As Γ-conduction band minimum.

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