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BaTiO3 integration with nanostructured epitaxial (100), (110), and (111) germanium for multifunctional devices.

Authors
  • Hudait, Mantu K
  • Zhu, Yan
  • Jain, Nikhil
  • Maurya, Deepam
  • Zhou, Yuan
  • Varghese, Ron
  • Priya, Shashank
Type
Published Article
Journal
ACS Applied Materials & Interfaces
Publisher
American Chemical Society
Publication Date
Nov 13, 2013
Volume
5
Issue
21
Pages
11446–11452
Identifiers
DOI: 10.1021/am4036866
PMID: 24134542
Source
Medline
License
Unknown

Abstract

Ferroelectric-germanium heterostructures have a strong potential for multifunctional devices. Germanium (Ge) is attractive due to its higher electron and hole mobilities while ferroelectric BaTiO3 is promising due to its high relative permittivity, which can make next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. Here, we investigate the growth, structural, chemical, and band alignment properties of pulsed laser deposited BaTiO3 on epitaxial (100)Ge, (110)Ge, and (111)Ge layers. Cross-sectional transmission electron microscopy micrographs show the amorphous nature of the BaTiO3 layer and also show a sharp heterointerface between BaTiO3 and Ge. The appearance of strong Pendellösung oscillation fringes from high-resolution X-ray diffraction implies the presence of parallel and sharp heterointerfaces. The valence band offset relation of ΔEV(100) ≥ ΔEV(111) > ΔEV(110) and the conduction band offset relation of ΔE(C)(110) > ΔE(C)(111) ≥ ΔE(C)(100) on crystallographically oriented Ge offer significant advancement for designing new-generation ferroelectric-germanium-based multifunctional devices.

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