Affordable Access

Access to the full text

Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

Authors
  • Perera, A. G. U.1
  • Lao, Y. F.1
  • Wijewarnasuriya, P. S.2
  • Krishna, S. S.3
  • 1 Georgia State University, Department of Physics and Astronomy, Atlanta, GA, 30303, USA , Atlanta (United States)
  • 2 U.S. Army Research Laboratory, Adelphi, MD, 20783, USA , Adelphi (United States)
  • 3 University of New Mexico, Center for High Technology Materials, Department of Electrical and Computer Engineering, Albuquerque, NM, 87106, USA , Albuquerque (United States)
Type
Published Article
Journal
Journal of Electronic Materials
Publisher
Springer US
Publication Date
Jun 22, 2016
Volume
45
Issue
9
Pages
4626–4630
Identifiers
DOI: 10.1007/s11664-016-4729-5
Source
Springer Nature
Keywords
License
Yellow

Abstract

The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III–V and II–VI materials are discussed.

Report this publication

Statistics

Seen <100 times