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Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface.

Authors
Type
Published Article
Journal
Advanced Materials
1521-4095
Publisher
Wiley Blackwell (John Wiley & Sons)
Publication Date
Volume
26
Issue
38
Pages
6587–6593
Identifiers
DOI: 10.1002/adma.201402427
PMID: 25167845
Source
Medline
Keywords
  • Carrier Scatter
  • Field-Effect Transistor
  • Indium Selenide
  • Mobility
  • Two Dimensional Layer Semiconductor

Abstract

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