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Growth of silicon oxide on silicon in the thin film region in an oxygen plasma

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
83
Issue
5
Identifiers
DOI: 10.1016/0038-1098(92)90250-d

Abstract

Abstract The time dependence of silicon oxide growth in a radio frequency oxygen plasma is studied by using in situ rapid ellipsometry. An extremum in the change of the ellipsometric parameter Δ versus discharge time is observed in the thin films region and is explained by a change in the refractive index value accompanying the oxide film growth.

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