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Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices

Authors
Journal
International Journal of Heat and Mass Transfer
0017-9310
Publisher
Elsevier
Publication Date
Volume
50
Identifiers
DOI: 10.1016/j.ijheatmasstransfer.2007.03.013
Keywords
  • Microchannel Cooler
  • Single Phase Flow
  • Electronic Packaging
  • Diamond
Disciplines
  • Chemistry

Abstract

Abstract Experiments on removing high heat fluxes from GaN-on-SiC semiconductor dies using microchannel coolers are described. The dies contain an AlGaN/GaN heterostructure operated as a direct current resistor, providing a localized heat source. The active dimensions of the heat source are sized to represent the spatially-averaged heat flux that would appear in microwave power amplifiers. A wide variety of microchannel materials and configurations are investigated, allowing a comparison of performance and the resulting GaN temperatures. Silicon and AlN microchannel coolers exhibit good performance at lower power densities (1000–1200 W/cm 2 over 3 × 5 mm 2 to 2 × 5 mm 2 active areas). Polycrystalline chemical vapor deposited (CVD) SiC microchannel coolers are found to be extremely promising for higher power densities (3000–4000 W/cm 2 over 1.2 × 5 mm 2 active areas with 120 °C GaN temperature). A hybrid microchannel cooler consisting of low-cost CVD diamond on polycrystalline CVD SiC exhibits moderately better performance (20–30%) than polycrystalline CVD SiC alone.

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