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Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

Authors
Journal
Materials Science in Semiconductor Processing
1369-8001
Publisher
Elsevier
Publication Date
Volume
5
Identifiers
DOI: 10.1016/s1369-8001(02)00132-4
Keywords
  • B1. Silicon
  • A2. Czochralski Method
  • A1. Turbulent Convection
Disciplines
  • Mathematics

Abstract

Abstract We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during CZ Si crystal growth. The 3D analysis includes the calculation of the crystallization front geometry, validated by comparing experimental data and results obtained with a conventional 2D model. At the second step, an analysis of defect incorporation and evolution in the crystal has been performed within a 2D model.

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