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New BNL 3D-Trench electrode Si detectors for radiation hard detectors for sLHC and for X-ray applications

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Publication Date
DOI: 10.1016/j.nima.2011.05.003
  • 3D Electrode Si Detectors
  • Radiation
  • Damage
  • Hardness
  • 3D-Trench Electrode Detectors
  • Independent Coaxial Detector Array (Icda)
  • 3D-Trench-Cj
  • 3D-Trench-Orj
  • Mathematics
  • Physics


Abstract A new international-patent-pending (PCT/US2010/52887) detector type, named here as 3D-Trench electrode Si detectors, is proposed in this work. In this new 3D electrode configuration, one or both types of electrodes are etched as trenches deep into the Si (fully penetrating with SOI or supporting wafer, or non-fully penetrating into 50–90% of the thickness), instead of columns as in the conventional (“standard”) 3D electrode Si detectors. With trench etched electrodes, the electric field in the new 3D electrode detectors are well defined without low or zero field regions. Except near both surfaces of the detector, the electric field in the concentric type 3D-Trench electrode Si detectors is nearly radial with little or no angular dependence in the circular and hexangular (concentric-type) pixel cell geometries. In the case of parallel plate 3D trench pixels, the field is nearly linear (like the planar 2D electrode detectors), with simple and well-defined boundary conditions. Since each pixel cell in a 3D-Trench electrode detector is isolated from others by highly doped trenches, it is an electrically independent cell. Therefore, an alternative name “Independent Coaxial Detector Array”, or ICDA, is assigned to an array of 3D-Trench electrode detectors. The electric field in the detector can be reduced by a factor of nearly 10 with an optimal 3D-Trench configuration where the junction is on the surrounding trench side. The full depletion voltage in this optimal configuration can be up to 7 times less than that of a conventional 3D detector, and even a factor of two less than that of a 2D planar detector with a thickness the same as the electrode spacing in the 3D-Trench electrode detector. In the case of non-fully penetrating trench electrodes, the processing is true one-sided with backside being unprocessed. The charge loss due to the dead space associated with the trenches is insignificant as compared to that due to radiation-induced trapping in sLHC environment. Since the large electrode spacing (up to 500 μm) can be realized in the 3D-Trench electrode detector due to their advantage of greatly reduced full depletion voltage, detectors with large pixel cells (therefore small dead volume) can be made for applications in photon science (e.g. X-ray).

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