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Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-3093(95)00727-x
Keywords
  • Section 8. Stability And Equilibration
Disciplines
  • Physics

Abstract

Abstract In the field of the stability of a-Si:H, the received wisdom is that a high clustered-phase SiH concentration is to be avoided. In this high-intensity illumination study of a-Si:H films grown using different techniques, it is found that the steady-state defect density is proportional to the dilute-phase concentration [SiH] d below ≈ 16%. A model is proposed to quantify the participation of the different H-bonding configurations in the metastability phenomena. It predicts a steady-state defect density proportional to [SiH] d and accurately describes the recently observed changes in the infrared absorption of the various H-bonding configurations during light-soaking.

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