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Influencе of carbon atoms on formation of impurity complexes in silicon single crystals

Authors
Publisher
PRIVAT COMPANY "TECHNOLOGY CENTER"
Publication Date
Keywords
  • Silicon
  • Single Crystal
  • Carbon
  • Impurity Complex
  • Кремний
  • монокристалл
  • углерод
  • примесные комплексы
  • Кремній
  • монокристал
  • вуглець
  • домішкові комплекси
  • УДК 621.315.592

Abstract

It is experimentally established, that during growth of dislocations-free silicon single crystals on method Czochralski owing to change of a ratio of impurity concentration there is an activization of participation of carbon atoms in impurity complexes formation

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