Affordable Access

Publisher Website

On the influence of diffusion and surface recombination upon the GR noise spectrum of semiconductors

Authors
Journal
Physica
0031-8914
Publisher
Elsevier
Publication Date
Volume
26
Issue
9
Identifiers
DOI: 10.1016/0031-8914(60)90065-3

Abstract

Abstract Several theories of generation-recombination (GR) noise in nearly intrinsic semi-conductors which consider the effects of diffusion and surface recombination are discussed. It is shown that the earlier eigenfunction treatments of Hyde and of van Vliet and van der Ziel do not allow for the fact that Fourier coefficients of different spatial modes are correlated. A proper treatment based on a transmission line analogy is presented and the result is examined for the cases arising when the recombination process is: 1) volume-limited; 2) surface-limited; and 3) diffusion-limited. For the diffusion-limited case, it is found that the spectrum varies as ω - 3 2 at high frequencies; at low frequencies, the noise determined from the turnover frequency is 5 6 that found for the volume- and surface-limited cases.

There are no comments yet on this publication. Be the first to share your thoughts.