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A 0.8 μm BiCMOS technology for mixed analog-digital applications with complementary bipolar transistors

Authors
Journal
Microelectronic Engineering
0167-9317
Publisher
Elsevier
Publication Date
Volume
19
Identifiers
DOI: 10.1016/0167-9317(92)90494-c
Disciplines
  • Communication
  • Design

Abstract

Abstract BICMOS 3 is a submicron BiCMOS technology with high analog capability which exhibits vertical isolated NPN and PNP transistors, precise poly-Si/n+ capacitors and resistors and fast 0.8 μm CMOS with TiSi gates. The bipolar transistors are capable of 8 V supply voltage, the CMOS part is designed for 5 V operation. The aimed application field is telecommunications with focus on GSM cellular radio.

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