Abstract Methylallyltelluride (MATe) was synthesized and tested as part of a joint effort between American Cyanamid Co. and Hughes Research Laboratories to develop a Te alkyl suitable for low-temperature, high-growth-rate epitaxy of Hg1-xCdxTe (MCT) alloys by unassisted pyrolytic metalorganic chemical vapor deposition (MOCVD). Cadmium telluride and HgTe growth studies using MATe were performed at substrate temperatures between 250 and 350°C. Reproducible temperature-dependent CdTe growth rates as high as 30 μm/h were achieved at or above 290°C. The decomposition characteristics of the Hg source, dimethylmercury (DMHg), limited the minimum temperature for temperature-independent growth of HgTe to 325°C. Between 325 and 340°C the maximum HgTe growth rates were 15 μm/h. Room-temperature Hall measurements were performed on CdTe epitaxial layers grown on high-resistivity CdTe substrate at 300°C. These layers were p-type. Their carrier concentrations (NA-ND), resistivities (ρ) and Hall mobilities (μH) were 3.9X1015 ⩽ NA-ND ⩽ 2.7X1016cm-3, 14.2 ⩽ ρ ⩽ 54.3 Ω cm, and 15 ⩽ μH ⩽51 cm2/V h- s, respectively.