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Electronic stopping power for Monte Carlo simulation of ion implantation into SiC

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
0168-583X
Publisher
Elsevier
Publication Date
Volume
147
Identifiers
DOI: 10.1016/s0168-583x(98)00548-5
Keywords
  • Electronic Stopping
  • Ion Implantation
  • Silicon Carbide
  • Dopant Profiles

Abstract

Abstract A new electronic stopping power model for Monte Carlo simulation of ion implantation into 6H–SiC is presented. This model is based on the nonlinear density functional approach of Echenique et al. for the energy loss of slow ions moving through an electron gas and the ab initio pseudopotential calculations of Park et al. for the map of valence electrons of 6H–SiC crystal. A modified linear response theory has been used to treat the core electrons stopping. This model does not need fitting parameters and allows to fit the experimental distributions of implanted dopants in SiC both the peak region and the channeling tail of the SIMS profiles.

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