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Electrical and thermoelectrical properties of undoped Bi2Te3-Sb2Te3and Bi2Te3-Sb2Te3-Sb2Se3single crystals

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
52
Issue
4
Identifiers
DOI: 10.1016/0022-3697(91)90151-o
Keywords
  • Bismuth Telluride
  • Antimony Telluride
  • Antimony Selenide
  • Hall Effect
  • Thermoelectric Properties
Disciplines
  • Musicology
  • Physics

Abstract

Abstract The thermoelectric properties and Hall effects of a number of undoped Bi 2Te 3-Sb 2Te 3 pseudo-binary and Bi 2Te 3-Sb 2Te 3-5%Sb 2Se 3 pseudo-ternary single crystal alloys grown by the Bridgman method were measured over the temperature range from 77 to 580 K. All of the alloys showed p-type extrinsic conduction and the analysis of the Seebeck coefficient and electrical conductivity in the extrinsic range indicated partial degeneracy at the lower temperatures. The Seebeck coefficient and energy gap of the pseudo-ternary alloy increased and the electrical conductivity decreased with the addition of Sb 2Se 3. It was proved by the Hall measurement that the carrier concentration increased with increasing amount of Sb 2Te 3, and decreased with the addition of Sb 2Se 3, while the Hall mobility was constant except for the Sb 2Te 3-rich region at room temperature. The scattering of carriers in these alloys can be expressed as acoustic-mode lattice scattering and two-phonon processes. The figure of merit shows a maximum at a carrier concentration of about 4.0 × 10 19cm −3 at room temperature.

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