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Structural and electronic properties of graphite layers grown on SiC(0 0 0 1)

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
600
Issue
18
Identifiers
DOI: 10.1016/j.susc.2006.01.102
Keywords
  • Silicon Carbide
  • Graphite
  • Photoelectron Spectroscopy
  • Band Structure
  • Vicinal Surface
Disciplines
  • Engineering

Abstract

Abstract Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ϕ B, n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate.

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