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Rapid electron beam induced tantalum-silicon reactions

Authors
Journal
Applied Surface Science
0169-4332
Publisher
Elsevier
Publication Date
Volume
36
Identifiers
DOI: 10.1016/0169-4332(89)90962-8

Abstract

Abstract Rapid electron beam induced reactions in time scales varying from a millisecond to 100 ms have led to the formation of stable silicide films with the TaSi system. The films exhibit low resistivity, minimum lateral growth and no interfacial broadening with composition varying from TaSi 2.0 to TaSi 2.2.

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