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Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6

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  • Chemistry
  • Medicine
  • Physics

Abstract

Vapor--Liquid--Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si_{2}H_{6} Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6 Saeed Akhtar1, Koichi Usami1, Yoshishige Tsuchiya1;2, Hiroshi Mizuta2;3, and Shunri Oda1;2� 1Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan 2Solution Oriented Research for Science and Technology, JST, Kawaguchi, Saitama 332-0012, Japan 3School of Electronics and Computer Science, Southampton University, Highfield, Southampton SO17 1BJ, U.K. Received November 12, 2007; accepted December 7, 2007; published online January 11, 2008 We report 350 �C as a critical growth temperature for overcoming the aggregation of gold (Au) in the synthesis of high-density silicon nanowires (SiNWs) with controlled diameters in a vapor–liquid–solid (VLS) mechanism by the low-temperature decomposition of Si2H6. Low-temperature growth is considered essential for preserving the initial distribution of Au droplets (8� 5 nm) during SiNW nucleation with small (12 nm) and uniform (�5 nm) diameters. Au–Si eutectics increase in size with aggregation at high temperatures, resulting in SiNWs with large and random diameters. The crystal quality, defect formation, and morphology of the wires, grown in the (111) direction, are size dependent. # 2008 The Japan Society of Applied Physics DOI: 10.1143/APEX.1.014003 S ilicon nanowires (SiNWs) are promising materials for future nanoelectronic and photonic device applications.1,2) SiNWs may also be key components in chemical and biomedical sensors.3,4) The proposed appli- cations have been motivating new research and development of growth technologies for realizing the synthesis of controlled-diameter SiNWs via a vapor–liquid–solid (VLS) mechanism.5,6) Gold (Au) has been commonly used to mediate SiNW growth because the eutectic temperature of bulk Au–Si is lower than thos

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