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Properties of thin films of tin sulphide produced using the thermal evaporation method

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  • Chemistry
  • Mathematics


Microsoft Word - Session Code -3BV.4.41_Abstract no 450_.doc PROPERTIES OF THIN FILMS OF TIN SULPHIDE PRODUCED USING THE THERMAL EVAPORATION METHOD O.E. Ogah, G. Zoppi, I. Forbes, R. W. Milesx Northumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle upon Tyne, NE1 8ST, UK xTel: +44 191 227 4594, Fax: +44 191 227 3650, Email: [email protected] ABSTRACT: SnS is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS2, Sn2S3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers deposited were investigated. Energy dispersive x-ray analysis was used to determine the film composition, x-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and other optical constants and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be sensitive to the deposition conditions used. Keywords: Thin Film, Optical Properties, Characterisation. 1 INTRODUCTION The most advanced materials for making thin film solar cells are those based on the use of cadmium telluride (CdTe) or copper indium gallium diselenide (Cu(In

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