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Temperature dependence of H radical etching in the deposition of microcrystalline silicon alloy thin films by HG-sensitized photo-CVD

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
114
Identifiers
DOI: 10.1016/0022-3093(89)90725-4

Abstract

Abstract The etching of a-Si:H by H radicals in Hg-sensitized photo-CVD is studied as a function of deposition temperature, etch temperature and film hydrogen content. For films deposited at the same temperature, etch rates increased as etch temperature decreased from 230°C to 100°C and were temperature independent for temperatures between 100°C and 40°C. Etch rate increased with decreasing deposition temperature, but did not change when hydrogen content was varied by changing pressure and dilution. Under conditions producing high etch rates, microcrystalline films of Si:B:H and SiGe:H were prepared at temperatures as low as 100°C.

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