There is a significant need in recent mobile communication and wireless broadband systems for high-performance analog-to-digital converters (ADCs) that have wide bandwidth (BW>5-MHz) and high data rate (>100-Mbps). A delta-sigma ADC is recognized as a power-efficient ADC architecture when high resolution (>12-b) is required. This is due to several advantages of the delta-sigma ADC including relaxed anti-aliasing filter requirements, high signal-to-noise and distortion ratio (SNDR) and most importantly, reduced sensitivity to analog imperfections. In this thesis, several structures and design techniques are developed for the implementation of continuoustime (CT) and discrete-time (DT) delta-sigma ADCs. These techniques save the total power consumption, reduce the design complexity, and decrease the chip die area of delta-sigma modulators. First a 4th-order single stage CT delta-sigma ADC with a novel single-amplifier-biquad (SAB) based loop filter is presented. By utilizing the SAB networks in the loop filter of an Nth-order CT delta-sigma modulator, it requires only half the number of active amplifiers and feed-forward branches used in the conventional modulator architecture, thus decreasing the power consumption and area by reducing the number of amplifiers. The proposed scheme also enables the modulator to use a switch-capacitor (SC) adder due to the reduced number of feedforward branches to its summing block. As a sequence, it consumes less power compared to a conventional CT adder. With a 130-nm CMOS technology, the fabricated prototype IC achieves a dynamic range of 80 dB with 10 MHz signal bandwidth and analog power dissipation lower than 12 mW. Presented as the second scheme to save power consumption and chip die area in ΔΣ modulators is a new stage-sharing technique in a discrete-time 2-2 MASH ΔΣ ADC. The proposed technique shares all the active blocks of the modulator second stage with its first stage during the two non-overlapping clock phases. Measurement results show that the modulator designed in a 0.13-um CMOS technology achieves 76 dB SNDR over a 10 MHz conversion bandwidth dissipating less than 9 mW analog power.