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Asymmetry in the vertically aligned growth induced InAs islands in GaAs

Authors
  • gong, q
  • wu, j
  • xu, b
  • liang, jb
  • fan, tw
  • wang, zg
  • bai, yq
Publication Date
Jan 01, 1998
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

A 10-InAs-island-layer vertically coupled quantum dot structure on (001) GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy. The result shows that the vertically aligned InAs islands are asymmetrical along the two < 110 > directions on the (001) growth plane. Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the III-V compound semiconductors.

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