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Asymmetrically - shaped diodes for microwave - submillimeter sensing

Authors
  • Asmontas, S.
  • Ardavicius, L.
  • Balakauskas, S.
  • Gradauskas, J.
  • Kozic, A.
  • Kundrotas, J.
  • Köhler, K.
  • Roskos, H.G.
  • Sachs, R.
  • Suziedelis, A.
  • Seliuta, D.
  • Sirmulis, E.
  • Valusis, G.
Publication Date
Jan 01, 2003
Source
Fraunhofer-ePrints
Keywords
Language
English
License
Unknown
External links

Abstract

We present a concept and possible applications of asymmetrically-shaped diodes fabricated from different types of semiconductors, i.e. non-uniform GaAs, n-Si and modulation-doped GaAs/Al(0.25)Ga(0.75)As structures. The devices can be used to detect electromagnetic radiation within a very-broad frequency band ranging from 10 GHz up to 2.5 THz (non-uniform GaAs diode) and for very intense pulsed radiation up to 10 kW (in the case of n-Si-based device).

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