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Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Authors
  • Liu, Yuan1, 2
  • Guo, Jian1
  • Zhu, Enbo1
  • Liao, Lei2
  • Lee, Sung-Joon1
  • Ding, Mengning1
  • Shakir, Imran3
  • Gambin, Vincent4
  • Huang, Yu1, 5
  • Duan, Xiangfeng5, 6
  • 1 University of California, Department of Materials Science and Engineering, Los Angeles, CA, USA , Los Angeles (United States)
  • 2 College of Chemistry and Chemical Engineering, and School of Physics and Electronics, Hunan University, State Key Laboratory for Chemo/Biosensing and Chemometrics, Changsha, China , Changsha (China)
  • 3 College of Engineering, King Saud University, Sustainable Energy Technologies Centre, Riyadh, Saudi Arabia , Riyadh (Saudi Arabia)
  • 4 Northrop Grumman Corporation, NG NEXT, Redondo Beach, CA, USA , Redondo Beach (United States)
  • 5 California Nanosystems Institute, University of California, Los Angeles, CA, USA , Los Angeles (United States)
  • 6 University of California, Department of Chemistry and Biochemistry, Los Angeles, CA, USA , Los Angeles (United States)
Type
Published Article
Journal
Nature
Publisher
Springer Nature
Publication Date
May 16, 2018
Volume
557
Issue
7707
Pages
696–700
Identifiers
DOI: 10.1038/s41586-018-0129-8
Source
Springer Nature
License
Yellow

Abstract

In metal–semiconductor junctions, interfacial bonding and disorder cause deviations from theoretical predictions for the energy barrier, but delicately transferring pre-fabricated metal films onto two-dimensional semiconductors can overcome this challenge.

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