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Annealing effects on epitaxial (K,Na)NbO3 thin films grown on Si substrates

Authors
  • Tanaka, Kiyotaka
  • Ogawa, Rei
  • Kweon, Sang Hyo
  • Tan, Goon
  • Kanno, Isaku
Type
Published Article
Journal
Japanese Journal of Applied Physics
Publisher
Japan Society of Applied Physics
Publication Date
Aug 02, 2022
Volume
61
Issue
SN
Identifiers
DOI: 10.35848/1347-4065/ac8143
Source
ioppublishing
Keywords
Disciplines
  • Ferroelectric Materials and Their Applications (FMA2022)
License
Unknown

Abstract

Epitaxial (K,Na)NbO3 (KNN) thin films were deposited on (001)SrRuO3/Pt/ZrO2/Si substrates by RF magnetron sputtering, and post-annealing effects on the as-deposited epitaxial KNN thin films were investigated. According to the findings, by annealing, the crystal system of these thin films changes from a tetragonal to an orthorhombic system because of the release of internal stress. The asymmetry of polarization–electric field hysteresis loops along the electric field changes from a positive to a negative side by annealing. This means that stable spontaneous polarization P s changes from the upward to downward direction with an increase in the number of A-site vacancies. In addition, the displacement–electric field curves of epitaxial KNN/Si unimorph cantilevers exhibit asymmetric behaviors. A relatively high converse piezoelectric coefficient ∣e 31,f ∣ = 6.4 C m−2 is obtained for 5 h annealed epitaxial KNN thin films.

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