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All-Dielectric Metasurface-Enabled Near-Infrared Switching Based on Ge2Sb2Te5 Phase-Change Material

Authors
  • Mishra, Prateek1
  • Srivastava, Vibhu1
  • Kumar, Mirgendar2
  • Sunny,1
  • 1 Indian Institute of Information Technology, Allahabad, India , Allahabad (India)
  • 2 Yeungnam University, Gyeongsan, South Korea , Gyeongsan (South Korea)
Type
Published Article
Journal
Journal of Electronic Materials
Publisher
Springer US
Publication Date
Apr 06, 2020
Volume
49
Issue
6
Pages
3913–3919
Identifiers
DOI: 10.1007/s11664-020-08101-1
Source
Springer Nature
Keywords
License
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Abstract

A metasurface for use in multiscale applications in the near-infrared (NIR) range is proposed herein. A detailed study is carried out on a polarization-insensitive, single-layered, reconfigurable swastika-like metasurface for NIR switching. Using germanium antimony telluride (Ge2Sb2Te5) as a phase-change material, the metasurface works as a NIR switch in the wavelength range from 1.8 μm and 2.2 μm. The metasurface consists of a patterned Ge2Sb2Te5 thin film on a glass substrate, making it an all-dielectric metastructure. A high switching contrast ratio, i.e., ratio of maximum to minimum transmission, of 150 was obtained. Light with different polarizations had no effect on the switching behavior of the metasurface, making it a potential candidate for the development of advanced, tunable, and integrated photonic devices.

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