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Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition

Authors
  • wang, xl
  • zhao, dg
  • jiang, ds
  • yang, h
  • liang, jw
  • jahn, u
  • ploog, k
Publication Date
Jan 01, 2007
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

The A1 compositional distribution of A1GaN is investigated by cathodoluminescence (CL). Monochromatic CL images and CL spectra reveal a lateral A1 compositional inhomogeneity, which corresponds to surface hexagonal patterns. Cross-sectional CL images show a relatively uniform Al compositional distribution in the growth direction, indicating columnar growth mode of A1GaN films. In addition, a thin A1GaN layer with lower Al composition is grown on top of the buffer A1N layer near the bottom of the A1GaN epilayer because of the larger lateral mobility of Ga adatoms on the growth surface and their accumulation at the grain boundaries.

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