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Far-infrared emission and possibility of population inversion of hot holes in MQW InGaAs/GaAs heterostructures under real space transfer

Authors
Journal
Physica B Condensed Matter
0921-4526
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0921-4526(98)00356-1
Keywords
  • Strained Heterostructures
  • Hot Carriers
  • Population Inversion
  • Far-Infrared Spectroscopy
Disciplines
  • Physics

Abstract

Abstract Hot holes in strained MQW In x Ga 1− x As/GaAs heterostructures excited at lateral charge transport are probed by far-infrared emission and band gap photoluminescence. Highly nonequilibrium phenomena discovered are shown to result from the real space transfer. New mechanism for the population inversion between continuum and shallow bound states in quantum wells in high lateral electric fields is put forward.

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